发明名称 |
METHOD AND DEVICE FOR PRODUCING MASK |
摘要 |
A method and a device for producing a mask that can be used in an electron beam exposure system in a shorter time and at lower costs, wherein a circuit pattern (P5c) formed on a wafer (5C) is magnified alpha . beta times and divided into N pieces to prepare partial master patterns (Pi (i=1 to N)) and master reticles (Ri (i=1 to N)) each describing a corresponding partial master pattern are prepared. A region on a mask substrate (1D) in which a mask pattern (P1d) is formed is etched from the rear surface thereof to be formed into a thin film and reduced images (PIi (i=1 to N)) each obtained by reducing 1/ beta times a partial master pattern (Pi) of a master reticle (Ri) are transferred onto the mask substrate (1D) by an optical projection exposure system while performing an image joining, thereby producing a working mask (WM4) for an electron beam exposure system.
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申请公布号 |
WO0025351(A1) |
申请公布日期 |
2000.05.04 |
申请号 |
WO1999JP04500 |
申请日期 |
1999.08.20 |
申请人 |
NIKON CORPORATION;SHIRAISHI, NAOMASA |
发明人 |
SHIRAISHI, NAOMASA |
分类号 |
G03F1/20;(IPC1-7):H01L21/027;G03F1/16 |
主分类号 |
G03F1/20 |
代理机构 |
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代理人 |
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主权项 |
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