发明名称 |
Compositions and processes for immersion lithography |
摘要 |
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials having a water contact angle that can be changed by treatment with base and/or one or more materials that comprise fluorinated photoacid-labile groups and/or one or more materials that comprise acidic groups spaced from a polymer backbone. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. |
申请公布号 |
EP2420892(A1) |
申请公布日期 |
2012.02.22 |
申请号 |
EP20110189827 |
申请日期 |
2007.10.30 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS LLC |
发明人 |
CAPORALE, STEFAN J.;BARCLAY, GEORGE G;WANG, DEYAN;JIA, LI |
分类号 |
G03F7/20;G03F7/004;G03F7/038;G03F7/039 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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