发明名称 |
A NONVOLATILE MEMORY DEVICE USING CHARGE TRAPS OF SILICON-RICH OXIDES AND A MANUFACTURING METHOD THEREOF |
摘要 |
<p>PURPOSE: A non-volatile memory device using a charge trap of an overflowing silicon oxide film and a manufacturing method thereof are provided to utilize deformity as a charge storage trap by forming SiO2/SiOx/SiO2 memory device structures by ion beam sputtering deposition. CONSTITUTION: A tunneling SiO2 layer is formed on an n-type Si wafer. The tunneling SiO2 layer is formed by ion beam sputtering deposition. An overflowing silicon oxide film is formed on the tunneling SiO2 layer. A control oxide film is formed on the tunneling SiO2 layer. An Al electrode of a diameter of 200micrometers is deposited on a sample in order to measure capacitance-voltage of a metal-oxide-semiconductor capacitor.</p> |
申请公布号 |
KR20120015636(A) |
申请公布日期 |
2012.02.22 |
申请号 |
KR20100077892 |
申请日期 |
2010.08.12 |
申请人 |
UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY |
发明人 |
CHOI, SUK HO;KIM, MIN CHOUL;LIM, KEUN YONG |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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