| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor-phase growth method of excellent crystallinity by improving control efficiency for the partial pressure of water content and oxygen. SOLUTION: A reactive chamber 13 which is, comprising a heating means 15, connected to first and second high-vacuum exhausting means 31 and 32, and at least first and second load lock chambers 11 and 12 wherein a substrate 1 for vapor-phase growth is carried into the reactive chamber 13 in vacuum condition, are provided. Here, with a third high-vacuum exhausting means 33 connected to the first load lock chamber 11, the reactive chamber 13 and the load lock chamber 11 are efficiently exhausted with additional high-vacuum exhausting means so that the water content and oxygen partial pressure are lowered sufficiently in a short time.
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