NEGATIVE ION SOURCE, ION BEAM ANALYSIS DEVICE, ETCHING DEVICE, OXYGEN RADICAL GENERATION DEVICE AND WASTE GAS PROCESSOR

摘要

PROBLEM TO BE SOLVED: To provide a negative ion source, an ion beam analysis device, an etching device, an oxygen radical generation device and an waste gas processor which can attain a large ion current by generating a surface-like negative ions by utilization of diamond semi-conductor device structure, with a diamond serving as a semi-conductor. SOLUTION: A negative ion source comprises: a diamond layer; a low resistance diamond layer which has a lower resistance than that of the diamond layer and is connected to the diamond layer; an electrode 3 which is formed on a surface where the low resistance layer in the diamond layer is not connected; a surface electrode 4 which can transmit a negative ion 12 formed on a surface that is not connected to the diamond layer in the low resistance diamond layer; and an extraction electrode 9 which is disposed in a thickness direction of the diamond layer at a distance from the surface electrode 4.