| 发明名称 |
Method of forming a shallow trench isolation structure having a polysilicon capping layer |
| 摘要 |
A method of fabricating an isolation structure and the structure thereof is provided. The method is compatible with the embedded memory process and provides the isolation structure with a poly cap thereon to protect the top corners of the isolation structure, without using an extra photomask. |
| 申请公布号 |
US8119489(B2) |
申请公布日期 |
2012.02.21 |
| 申请号 |
US20080058183 |
申请日期 |
2008.03.28 |
| 申请人 |
SHIH PING-CHIA;UNITED MICROELECTRONICS CORP. |
发明人 |
SHIH PING-CHIA |
| 分类号 |
H01L21/336;H01L21/302;H01L21/31;H01L21/3205;H01L21/76 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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