发明名称 |
Air gap interconnect structures and methods for forming the same |
摘要 |
A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines. |
申请公布号 |
US8120179(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20090615354 |
申请日期 |
2009.11.10 |
申请人 |
CHANDA KAUSHIK;CHRISTIANSEN CATHRYN J.;EDELSTEIN DANIEL C.;NITTA SATYANARAYANA V.;NGUYEN SON V.;PONOTH SHOM;SHOBHA HOSADURGA;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANDA KAUSHIK;CHRISTIANSEN CATHRYN J.;EDELSTEIN DANIEL C.;NITTA SATYANARAYANA V.;NGUYEN SON V.;PONOTH SHOM;SHOBHA HOSADURGA |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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