| 摘要 |
An electrostatic discharge (ESD) protection circuit includes a first array of transistors, having source and drain doped with a first type of material, arranged in parallel in a first block, and a second array of transistors, having source and drain doped with the first type of material, arranged in parallel in a second block. The ESD protection circuit also includes an active region between the first and second array of transistors doped with a second type of material that is complementary to the first type of material. |
