发明名称 |
Method of fabricating a semiconductor device |
摘要 |
One method includes fabricating a semiconductor device including providing a dielectric layer. At least one semiconductor chip is provided defining a first surface including contact elements and a second surface opposite to the first surface. The semiconductor chip is placed onto the dielectric layer with the first surface facing the dielectric layer. An encapsulant material is applied over the second surface of the semiconductor chip in a reel-to-reel process. |
申请公布号 |
US8119452(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20090353432 |
申请日期 |
2009.01.14 |
申请人 |
BEER GOTTFRIED;ESCHER-POEPPEL IRMGARD;INFINEON TECHNOLOGIES AG |
发明人 |
BEER GOTTFRIED;ESCHER-POEPPEL IRMGARD |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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