发明名称 |
Method of forming a stressed passivation film using a microwave-assisted oxidation process |
摘要 |
A method for forming a stressed passivation film. In one embodiment, the method includes depositing a silicon nitride film over an integrated circuit structure on a substrate and embedding oxygen into a surface of the silicon nitride film by exposing the silicon nitride film to a process gas containing an oxygen-containing or an oxygen- and nitrogen-containing gas excited by plasma induced dissociation based on microwave irradiation via a plane antenna member having a plurality of slots, wherein the plane antenna member faces the substrate surface containing the silicon nitride film. The method further includes heat-treating the oxygen-embedded silicon nitride film to form a stressed silicon oxynitride film. |
申请公布号 |
US8119540(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20080058585 |
申请日期 |
2008.03.28 |
申请人 |
CLARK ROBERT D;TOKYO ELECTRON LIMITED |
发明人 |
CLARK ROBERT D |
分类号 |
H01L21/34;H01L21/00;H01L21/469 |
主分类号 |
H01L21/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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