发明名称 |
High performance capacitors in planar back gates CMOS |
摘要 |
A method of manufacture and device for a dual-gate CMOS structure. The structure includes a first plate in an insulating layer and a second plate above the insulating layer electrically corresponding to the first plate. An isolation structure is between the first plate and the second plate. |
申请公布号 |
US8119474(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20100688243 |
申请日期 |
2010.01.15 |
申请人 |
BRYANT ANDRES;NOWAK EDWARD J.;WILLIAMS RICHARD Q.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRYANT ANDRES;NOWAK EDWARD J.;WILLIAMS RICHARD Q. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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