发明名称 Mask pattern correcting method
摘要 In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model.
申请公布号 US8122385(B2) 申请公布日期 2012.02.21
申请号 US20080129167 申请日期 2008.05.29
申请人 FUKUHARA KAZUYA;HIGASHIKI TATSUHIKO;KOTANI TOSHIYA;TANAKA SATOSHI;SATO TAKASHI;MIMOTOGI AKIKO;SATAKE MASAKI;KABUSHIKI KAISHA TOSHIBA 发明人 FUKUHARA KAZUYA;HIGASHIKI TATSUHIKO;KOTANI TOSHIYA;TANAKA SATOSHI;SATO TAKASHI;MIMOTOGI AKIKO;SATAKE MASAKI
分类号 G06F17/50;G03F1/36;G03F1/68;H01L21/027;H01L21/82 主分类号 G06F17/50
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