发明名称 |
Data structure for flash memory and data reading/writing method thereof |
摘要 |
A data structure for a flash memory and data reading/writing method thereof are disclosed. A 512 bytes data and a redundant code derived from the data encoded with a 6-bit error correcting code scheme are stored in a first sector and a second sector with sequential address in a block of the flash memory respectively. A logic block address information of this block is divided into two parts that are stored in the first sector and the second sector respectively. |
申请公布号 |
US8122303(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20080122768 |
申请日期 |
2008.05.19 |
申请人 |
NI JIAN-QIANG;HE DONG-YU;LIAO CHUN-TING;REALTEK SEMICONDUCTOR CORP. |
发明人 |
NI JIAN-QIANG;HE DONG-YU;LIAO CHUN-TING |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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