发明名称 |
Magnetic random access memory and method of manufacturing the same |
摘要 |
A domain wall motion type MRAM 100 has: a magnetic recording layer 10 that is a ferromagnetic layer; and a magnetic coupling layer 20 that is a ferromagnetic layer whose magnetization direction is fixed. The magnetic recording layer 10 has: a first region 10-1; a second region 10-2; and a magnetization switching region 10-3 connecting between the first region 10-1 and the second region 10-2. The first region 10-1 is magnetically coupled to the magnetic coupling layer 20 and its magnetization direction is fixed in a first direction by the magnetic coupling layer 20. The second region 10-2 is not magnetically coupled to the magnetic coupling layer 20 and its magnetization direction is a second direction that is opposite to the first direction. |
申请公布号 |
US8120127(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20080670462 |
申请日期 |
2008.07.07 |
申请人 |
NAGAHARA KIYOKAZU;FUKAMI SHUNSUKE;SUZUKI TETSUHIRO;OHSHIMA NORIKAZU;ISHIWATA NOBUYUKI;NEC CORPORATION |
发明人 |
NAGAHARA KIYOKAZU;FUKAMI SHUNSUKE;SUZUKI TETSUHIRO;OHSHIMA NORIKAZU;ISHIWATA NOBUYUKI |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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