发明名称 Semiconductor device
摘要 A semiconductor device including a first transistor in a substrate, a second transistor in the substrate, and a further device in the substrate. The second transistor and the further device are arranged to operate at a second voltage which is higher than a first voltage. The first voltage is the (normal) voltage of operation of the first transistor, and the first transistor is isolated from the second voltage.
申请公布号 US8120121(B2) 申请公布日期 2012.02.21
申请号 US20070441165 申请日期 2007.09.13
申请人 ELLIS JOHN NIGEL;DE PAUW PIET;X-FAB SEMICONDUCTOR FOUNDRIES AG;MELEXIS TESSENDERLO N.V. 发明人 ELLIS JOHN NIGEL;DE PAUW PIET
分类号 H01L27/088;H01L21/70;H01L31/102 主分类号 H01L27/088
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