发明名称 |
MONOCRYSTAL SiC AND METHOD OF ITS GROWTH |
摘要 |
semiconductor industry; manufacture of diodes, amplifiers and optical elements. SUBSTANCE: complex (M) made through growing polycrystal water beta-SiC whose thickness is about 10 mkm or more on surface of monocrystal base material alpha-SiC by means of spraying with high-quality magnetron or thermochemical vapor precipitation is subjected to heat treatment at temperature of from 1650 to 2400 C owing to which polycrystals of polycrystal cube water beta-SiC are transformed into monocrystal and monocrystal is grown which is oriented in the same direction as crystal axis of monocrystal base material alpha-SiC. EFFECT: improved quality of monocrystal SiC free from microshrinkage defects and defects caused by microshrinkage. 11 cl, 3 dwg |
申请公布号 |
RU2160328(C1) |
申请公布日期 |
2000.12.10 |
申请号 |
RU19990105847 |
申请日期 |
1998.06.23 |
申请人 |
NIPPON PILLAR PEHKING KO., LTD |
发明人 |
TANINO KITIJJA |
分类号 |
C30B1/02;C30B23/02;C30B25/02;C30B29/36;C30B33/00;H01L21/20 |
主分类号 |
C30B1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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