| 摘要 |
<p>PURPOSE: An organic/inorganic hybrid diode and a manufacturing method thereof are provided to improve a current characteristic by performing p-type doping on an organic layer. CONSTITUTION: A substrate, an anode electrode(11), a hole implant layer(12), an active layer(13), an electron injection layer(14), and a cathode electrode(15) are successively formed in a diode. Or the substrate, the cathode electrode, the electron injection layer, the active layer, the hole implant layer, and the anode electrode are successively in the diode. The anode electrode and the cathode electrode are made of ITO(Indium Tin Oxide), AZO or metal and alloy. A p-type semiconductor material is a material which dopes an organic compound with a p-type material. An n-type semiconductor material is doped with an n-type material, N(Nitron), In(Indium), Ga(Gallium), Sn(Stannum), or Li(Lithium).</p> |
