发明名称 Resonant structure comprising wire and resonant tunneling transistor
摘要 A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.
申请公布号 US8120015(B2) 申请公布日期 2012.02.21
申请号 US20090357681 申请日期 2009.01.22
申请人 PARK YUN-KWON;HWANG SUNG-WOO;SHIN JEA-SHIK;HA BYEOUNG-JU;RIEH JAE-SUNG;SONG IN-SANG;KIM YONG-KYU;JU BYEONG-KWON;KIM HEE-TAE;SAMSUNG ELECTRONICS CO., LTD.;KOREA UNIVERSITY INDUSTRIAL AND ACADEMIC COLLABORATION FOUNDATION 发明人 PARK YUN-KWON;HWANG SUNG-WOO;SHIN JEA-SHIK;HA BYEOUNG-JU;RIEH JAE-SUNG;SONG IN-SANG;KIM YONG-KYU;JU BYEONG-KWON;KIM HEE-TAE
分类号 H01L29/06 主分类号 H01L29/06
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