发明名称 |
Resonant structure comprising wire and resonant tunneling transistor |
摘要 |
A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.
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申请公布号 |
US8120015(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20090357681 |
申请日期 |
2009.01.22 |
申请人 |
PARK YUN-KWON;HWANG SUNG-WOO;SHIN JEA-SHIK;HA BYEOUNG-JU;RIEH JAE-SUNG;SONG IN-SANG;KIM YONG-KYU;JU BYEONG-KWON;KIM HEE-TAE;SAMSUNG ELECTRONICS CO., LTD.;KOREA UNIVERSITY INDUSTRIAL AND ACADEMIC COLLABORATION FOUNDATION |
发明人 |
PARK YUN-KWON;HWANG SUNG-WOO;SHIN JEA-SHIK;HA BYEOUNG-JU;RIEH JAE-SUNG;SONG IN-SANG;KIM YONG-KYU;JU BYEONG-KWON;KIM HEE-TAE |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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