发明名称 Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
摘要 A substrate has at least one recess and/or protrusion formed in and/or on a surface thereof so as to scatter or diffract light generated in an active layer. The recess and/or protrusion is formed in such a shape that can reduce crystalline defects in semiconductor layers.
申请公布号 US8119534(B2) 申请公布日期 2012.02.21
申请号 US20100716506 申请日期 2010.03.03
申请人 TANAKA HISANORI;HOSOKAWA YASUNOBU;SHIBUTANI YUUKI;NICHIA CORPORATION 发明人 TANAKA HISANORI;HOSOKAWA YASUNOBU;SHIBUTANI YUUKI
分类号 H01L21/302;H01L33/06;H01L21/3065;H01L21/48;H01L23/04;H01L33/00;H01L33/22;H01L33/24;H01L33/32;H01L33/38;H01L33/40;H01L33/62 主分类号 H01L21/302
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