发明名称 Acoustic wave device
摘要 An acoustic wave device includes an acoustic wave element including an IDT electrode provided on a substrate, and a protective film arranged to cover the acoustic wave element so as to stabilize characteristics. The protective film is a silicon nitride film composed of silicon and nitrogen as main components and when a composition ratio of the silicon to the nitrogen is represented by 1:X, X is about 1.15 or less.
申请公布号 US8120230(B2) 申请公布日期 2012.02.21
申请号 US20100784564 申请日期 2010.05.21
申请人 TAKAI TSUTOMU;HAYAKAWA NORIHIRO;NISHINO TARO;MURATA MANUFACTURING CO., LTD. 发明人 TAKAI TSUTOMU;HAYAKAWA NORIHIRO;NISHINO TARO
分类号 H03H9/25 主分类号 H03H9/25
代理机构 代理人
主权项
地址