发明名称 Structure for a through-silicon-via on-chip passive MMW bandpass filter
摘要 A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a substrate including a silicon layer. Furthermore, the design structure includes a metal layer on a bottom side of the silicon layer and a dielectric layer on a top side of the silicon layer. Additionally, the design structure includes a top-side interconnect of the through-silicon via bandpass filter on a surface of the dielectric layer and a plurality of contacts in the dielectric layer in contact with the top-side interconnect. Further, the design structure includes a plurality of through-silicon vias through the substrate and in contact with the plurality of contacts, respectively, and the metal layer.
申请公布号 US8120145(B2) 申请公布日期 2012.02.21
申请号 US20080140364 申请日期 2008.06.17
申请人 BAVISI AMIT;DING HANYI;WANG GUOAN;WOODS, JR. WAYNE H.;XU JIANSHENG;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BAVISI AMIT;DING HANYI;WANG GUOAN;WOODS, JR. WAYNE H.;XU JIANSHENG
分类号 H01L27/06 主分类号 H01L27/06
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