发明名称 |
Semiconductor light emitting element |
摘要 |
The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers. |
申请公布号 |
US8120057(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US201113155045 |
申请日期 |
2011.06.07 |
申请人 |
SANO MASAHIKO;SAKAMOTO TAKAHIKO;EMURA KEIJI;KADAN KATSUYOSHI;NICHIA CORPORATION |
发明人 |
SANO MASAHIKO;SAKAMOTO TAKAHIKO;EMURA KEIJI;KADAN KATSUYOSHI |
分类号 |
H01L51/40;H01L33/02;H01L33/38;H01L33/42;H01L33/44 |
主分类号 |
H01L51/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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