发明名称 Method of manufacturing a semiconductor integrated circuit device including elimination of static charge of a treated wafer
摘要 A sealed type container accommodating a semiconductor substrate is positioned to a load port of a semiconductor manufacturing apparatus. The semiconductor substrate is taken out of the container. An ionizer is used for static-charge-eliminating the semiconductor substrates before and after process treatment in a transport area between the load port and a treatment section. The static-charge-eliminated semiconductor substrate is accommodated in the container positioned to the load port. Thus, it is possible to decrease foreign materials adhering to the semiconductor substrate and errors in handling the semiconductor substrate.
申请公布号 US8119547(B2) 申请公布日期 2012.02.21
申请号 US20080123584 申请日期 2008.05.20
申请人 KOBAYASHI YOSHIAKI;RENESAS ELECTRONICS CORPORATION 发明人 KOBAYASHI YOSHIAKI
分类号 H01L21/02;H01L21/027;H01L21/673;H01L21/677 主分类号 H01L21/02
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