发明名称 |
Non-volatile memory device |
摘要 |
Provided is a non-volatile memory device having a stacked structure that is easily highly integrated and a method of economically fabricating the non-volatile memory device. The non-volatile memory device may include at least one first electrode and at least one second electrode that cross each other. At least one data storage layer may be disposed on a section where the at least one first electrode and the at least one second electrode cross each other. The at least one first electrode may include a first conductive layer and a first semiconductor layer.
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申请公布号 |
US8120006(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20090585582 |
申请日期 |
2009.09.18 |
申请人 |
KIM SUK-PIL;KOO JUNE-MO;YOON TAE-EUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SUK-PIL;KOO JUNE-MO;YOON TAE-EUNG |
分类号 |
H01L47/00;H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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