发明名称 Concurrent multiple-dimension word-addressable memory architecture
摘要 An N-dimension addressable memory. The memory includes an N-dimension array of bit cells and logic configured to address each bit cell using N-Dimension Addressing (NDA), where N is at least two and the array of bit cells is addressable by N orthogonal address spaces. Each bit cell of the N-dimension addressable memory includes a bit storage element, N word lines, and N bit lines.
申请公布号 US8120989(B2) 申请公布日期 2012.02.21
申请号 US20070767639 申请日期 2007.06.25
申请人 CHEN CHIHTUNG;KANG INYUP;CHAIYAKUL VIRAPHOL;QUALCOMM INCORPORATED 发明人 CHEN CHIHTUNG;KANG INYUP;CHAIYAKUL VIRAPHOL
分类号 G11C7/10 主分类号 G11C7/10
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