发明名称 |
Line structure and method for manufacturing the same |
摘要 |
A line structure is provided which includes a ferroelectric film which is formed on at least one surface of both sides of a substrate and a permittivity of which changes according to a magnitude of an applied voltage, an inductor which is formed on a first side of the substrate, and a capacitor which has a capacitance corresponding to the permittivity of the ferroelectric film and the substrate. |
申请公布号 |
US8120534(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20080042402 |
申请日期 |
2008.03.05 |
申请人 |
PARK EUN-SEOK;LEE JEONG-HAE;KIM YOUNG-EIL;KIM JONG-SEOK;YOON ICK-JAE;RYU YOUNG-HO;PARK JAE-HYUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK EUN-SEOK;LEE JEONG-HAE;KIM YOUNG-EIL;KIM JONG-SEOK;YOON ICK-JAE;RYU YOUNG-HO;PARK JAE-HYUN |
分类号 |
H01Q1/38 |
主分类号 |
H01Q1/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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