Method for manufacturing SOI substrate

摘要

A semiconductor substrate and a base substrate made from an insulator are prepared; an oxide film containing a chlorine atom is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form an embrittled region at a predetermined depth from a surface of the semiconductor substrate; plasma treatment of the oxide film is performed by applying a bias voltage; a surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other to bond a surface of the oxide film and the surface of the base substrate to each other; and heat treatment is performed to cause separation along the embrittled region after bonding the surface of the oxide film and the surface of the base substrate to each other, thereby forming a semiconductor film over the base substrate with the oxide film interposed therebetween.