PURPOSE: A semiconductor device for including a through electrode is provided to improve a performance characteristic while reducing a size of a package by including a memory chip in one package and a control circuit. CONSTITUTION: A logic chip(100) includes a memory control circuit, a first through electrode(164), and a second through electrode(165). The first through electrode is interposed between the memory control circuit and a memory chip(200). The second through electrode is electrically insulated with the memory control circuit. The memory chip is laminated on the logic chip. The first through electrode connects the memory control circuit to the memory chip.
申请公布号
KR20120014952(A)
申请公布日期
2012.02.21
申请号
KR20100072049
申请日期
2010.07.26
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, GO EUN;CHO, TAE JE;KANG, UN BYOUNG;RYU, SEONG MIN;KIM, JUNG HWAN;MIM, TAE HONG