发明名称 |
Method of manufacturing high-integrated semiconductor device and semiconductor device manufactured using the same |
摘要 |
A semiconductor device comprises a plurality of vertical transistors each comprising barrier metal layers corresponding to source/drain regions in which a conduction region is formed under a channel region having a pillar form, and a bit line comprising a metal layer to connect the plurality of vertical transistors. |
申请公布号 |
US8119509(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20090495554 |
申请日期 |
2009.06.30 |
申请人 |
CHO YOUNG MAN;HYNIX SEMICONDUCTOR, INC. |
发明人 |
CHO YOUNG MAN |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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