| 摘要 |
<p>A photocathode having a UV glass substrate (3) and a laminate (10) composed of a SiO2 layer (15), a GaAlN layer (17a), a Group III-V nitride semiconductor layer (18) and an AlN buffer layer (17) provided on the UV glass substrate (3) in succession. The UV glass substrate (3), which absorbs infrared rays, can be heat treated at a high speed by photoheating. Further, the UV glass substrate (3), which is transparent to ultraviolet rays, permits ultraviolet rays to be introduced into the Group III-V nitride semiconductor layer (18) where photoelectric conversion occurs. <IMAGE></p> |
