发明名称 |
Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate |
摘要 |
In one aspect, an apparatus may include a metal gate of a transistor. An etch stop layer may be selectively formed over the metal gate. The etch stop layer may include a metal compound. An insulating layer may be over the etch stop layer. A conductive structure may be included through the insulating layer to the metal gate. Methods of making such transistors are also disclosed. |
申请公布号 |
US8120114(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20060646764 |
申请日期 |
2006.12.27 |
申请人 |
OTT ANDREW;KING SEAN;SHARMA AJAY;INTEL CORPORATION |
发明人 |
OTT ANDREW;KING SEAN;SHARMA AJAY |
分类号 |
H01L29/40;H01L23/48;H01L29/78 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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