发明名称 |
Inductively coupled dual zone processing chamber with single planar antenna |
摘要 |
A dual zone plasma processing chamber is provided. The plasma processing chamber includes a first substrate support having a first support surface adapted to support a first substrate within the processing chamber and a second substrate support having a second support surface adapted to support a second substrate within the processing chamber. One or more gas sources in fluid communication with one or more gas distribution members supply process gas to a first zone adjacent to the first substrate support and a second zone adjacent to the second substrate support. A radio-frequency (RF) antenna adapted to inductively couple RF energy into the interior of the processing chamber and energize the process gas into a plasma state in the first and second zones. The antenna is located between the first substrate support and the second substrate support. |
申请公布号 |
US8119532(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US201113116377 |
申请日期 |
2011.05.26 |
申请人 |
SANT SANKET P.;LAM RESEARCH CORPORATION |
发明人 |
SANT SANKET P. |
分类号 |
H01L21/461;C03C15/00;H01L21/469;H05H1/24 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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