| 摘要 |
PURPOSE: A metal nano-particle embedded light emitting diode structure in which a conductive medium layer is included is provided to match a surface Plasmon peak wavelength and a light emitting wavelength of a quantum well active layer, thereby maximizing Plasmon resonance coupling effects. CONSTITUTION: A conductive medium layer(205) is arranged on an n-type doping semiconductor layer(203b). A p-type doping semiconductor layer(203a) is arranged on a quantum well active layer(204). The conductivity medium layer includes metal nano-particles(206). The n-type doping semiconductor layer and the p-type doping semiconductor layer have opposite doping properties. The metal nano-particles are made of an element among Au, Ag, Al, Cu, Ti, Ir, Mo, Ni, Os, Pt, Rh, and W.
|
