METHOD FOR MANUFACTURING INTEGRATED CIRCUIT INTEGRATING ELECTRICALLY PROGRAMMABLE NONVOLATILE MEMORY AND HIGH PERFORMANCE LOGIC CIRCUIT NET IN IDENTICAL SEMICONDUCTOR CHIP

摘要

PROBLEM TO BE SOLVED: To provide a method for integrating a nonvolatile memory and a high performance logic circuit network in the same semiconductor chip. SOLUTION: The floating gate of a memory cell of a nonvolatile memory and a gate electrode of a high voltage transistor regarding the nonvolatile memory are formed of a first polysilicon layer, and the control gate of a memory cell of the nonvolatile memory and the gate electrode of a low voltage transistor regarding a high performance logic circuit network are formed of a second polysilicon layer.