发明名称 |
INSULATED-GATE FIELD-EFFECT TRANSISTOR |
摘要 |
electronic engineering; heavy-current control devices for electrical and electronic industries. SUBSTANCE: degenerated single-crystal silicon n+� layer of transistor drain is made in the form of hollow cylinder. Cylinder- shaped metal contact of drain is formed on inner surface of this layer. Single-crystal silicon n layer is formed on outer surface of this layer to organize conduction channel. Central part of single-crystal silicon n layer for organizing conduction channel carries cylindrical insulating layer with cylindrical metal contact of gate deposited on its surface; pair of cylindrical metal contacts of source is provided on ether side of gate. EFFECT: facilitated suppression of end effect; reduced electrothermal degradation level; enhanced operating power. 2 cl, 1 dwg
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申请公布号 |
RU2175795(C1) |
申请公布日期 |
2001.11.10 |
申请号 |
RU20000132424 |
申请日期 |
2000.12.25 |
申请人 |
MOSKOVSKIJ GOSUDARSTVENNYJ INSTITUT STALI I SPLAVO;T UNI V |
发明人 |
KOZHITOV L.V.;KRAPUKHIN V.V.;KONDRATENKO T.T.;TIMOSHINA G.G.;KONDRATENKO T.JA.;KOVALEV A.N. |
分类号 |
H01L29/78;H01L51/00;(IPC1-7):H01L51/00 |
主分类号 |
H01L29/78 |
代理机构 |
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地址 |
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