A FULLY DIFFERENTIAL SOURCE FOLLOWER

摘要

PURPOSE: A source follower of a fully differential structure is provided to reduce mismatching on design by designing a source follower in a fully differential structure. CONSTITUTION: A first input voltage is applied to a gate of a first PMOS(P-channel Metal Oxide Semiconductor). A second input voltage is applied to a second PMOS. A first output voltage corresponding to the first input voltage is outputted to a node which is connected to a source of the first PMOS and a drain of a third PMOS. A second output voltage corresponding to the second input voltage is connected to the source of the first PMOS and the drain of a fourth PMOS. The source of the first PMOS is connected to the first output voltage terminal. The drain of the first PMOS is connected to the source of an eighth NMOS(N-channel Metal Oxide Semiconductor). The source of the second PMOS is connected to a second output voltage terminal. The drain of second PMOS is connected to the source of seven NMOS. The drain of the third PMOS is connected to the gate of a seven NMOS. The source of the third PMOS is connected to power.