发明名称 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND HEATING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can prolong the life of a heating apparatus while downsizing, and can improve the throughput by lowering the temperature in a furnace quickly, and to provide a method of manufacturing a semiconductor device and a heating apparatus. <P>SOLUTION: The substrate processing apparatus comprises a heating section constituted of a cylindrical heat insulation body and a heating wire arranged on the inner peripheral surface of the heat insulation body, a heat insulation section provided to form a cylindrical space for the heating section, a cooling gas introduction section provided on the upper side of the heat insulation section to surround the heating section and connected to the cylindrical space, and a cooling gas exhaust section provided at the substantially same height as the cooling gas introduction section from the substantially central part of the cooling gas introduction section toward the diameter direction. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012033871(A) 申请公布日期 2012.02.16
申请号 JP20110081466 申请日期 2011.04.01
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MURATA HITOSHI;KOSUGI TETSUYA
分类号 H01L21/31;C23C16/455;H01L21/22;H01L21/324 主分类号 H01L21/31
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