| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a plurality of cutting patterns on a wafer. <P>SOLUTION: Cutting patterns CP<SB POS="POST">1</SB>-CP<SB POS="POST">5</SB>are formed on a wafer W in multiple steps by using a cutting reticle CR in which a plurality of cutting patterns CP<SB POS="POST">1</SB>-CP<SB POS="POST">5</SB>are formed and a masking reticle MR in which opening patterns MP<SB POS="POST">1</SB>, MP<SB POS="POST">2</SB>are formed, and combining the cutting patterns CP<SB POS="POST">1</SB>-CP<SB POS="POST">5</SB>and opening patterns MP<SB POS="POST">1</SB>, MP<SB POS="POST">2</SB>. Consequently, a mask pattern can be formed by not preparing a plurality of reticles in which the cutting patterns CP<SB POS="POST">1</SB>-CP<SB POS="POST">5</SB>are formed respectively, but using only a cutting reticle CR and a masking reticle MR integrating them. <P>COPYRIGHT: (C)2012,JPO&INPIT |
