| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device capable of obtaining a compound semiconductor layer with a desired composition ratio, using a single source precursor. <P>SOLUTION: A method of manufacturing a photoelectric conversion device includes: a step of forming a surface layer containing a compound of a first metal element and a chalcogen element on a surface of an electrode layer 2 including the first metal element; a step of applying a material solution containing a single source precursor having an organic ligand, a group I-B element, and a group III-B element on the surface layer to form a precursor layer; and a step of heating the precursor layer to form a compound semiconductor layer of a chalcopyrite structure containing the group I-B element and the group III-B element. <P>COPYRIGHT: (C)2012,JPO&INPIT |
