| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a rear-surface passivation solar cell having a rear-surface passivation film with an optimized thickness in an actual situation. <P>SOLUTION: In a solar cell 1 using a P-type silicon substrate 100, a silicon nitride film 101 as a rear-surface passivation film is deposited on the reverse side of a light incident face, and the silicon nitride film 101 is formed with a thickness between 550 nm and 2000 nm, thereby improving conversion efficiency of the solar cell 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
