发明名称 |
METHOD OF FORMING AND USING PHOTOLITHOGRAPHY MASK HAVING A SCATTERING BAR STRUCTURE |
摘要 |
A method of forming a photolithography mask including forming a first linear non-dense feature on the mask and forming a plurality of parallel linear assist features disposed substantially perpendicular to the at least one linear non-dense design feature. In an embodiment, the photolithography mask further includes a first transverse linear assist feature disposed substantially transverse to the plurality of parallel linear assist features.
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申请公布号 |
US2012040276(A1) |
申请公布日期 |
2012.02.16 |
申请号 |
US201113277920 |
申请日期 |
2011.10.20 |
申请人 |
YEN YUNG-SUNG;CHEN KUEI SHUN;LAI CHIEN-WEN;TSAY CHERNG-SHYAN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,("TSMC") |
发明人 |
YEN YUNG-SUNG;CHEN KUEI SHUN;LAI CHIEN-WEN;TSAY CHERNG-SHYAN |
分类号 |
G03F7/20;G03F1/36 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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