发明名称 |
CLEANING TANTALIUM-CONTAINING DEPOSITS FROM PROCESS CHAMBER COMPONENTS |
摘要 |
<p>A method of cleaning tantalum-containing deposits from a copper surface of a process chamber component involves immersing the surface of the component in a cleaning solution. The cleaning solution has HF and an oxidizing agent. The cleaning solution can have a molar ratio of HF to the oxidizing agent of at least about 6:1, and the oxidizing agent can include at least one of HNO3, H2O2, H2SO3 and O3. The cleaning solution removes the tantalum-containing deposits from the surface substantially without eroding the surface.</p> |
申请公布号 |
KR20120014234(A) |
申请公布日期 |
2012.02.16 |
申请号 |
KR20127000548 |
申请日期 |
2004.05.25 |
申请人 |
QUANTUM GLOBAL TECHNOLOGIES, LLC |
发明人 |
BRUECKNER KARL;WANG HONG |
分类号 |
C23C16/44;B08B3/08;C22B3/06;C22B7/00;C22B34/24;C23C14/56;C23C16/56;C23G1/08;C23G1/10;C23G1/12;C23G1/19;C23G1/20;C23G1/22;H01L21/205 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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