| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a semiconductor device with excellent electric characteristics with high productivity. <P>SOLUTION: A seed crystal including mixed-phase grains with high crystallinity at low grain density is formed under a first condition, and then a microcrystalline semiconductor film is stacked on the seed crystal by growing the mixed-phase grains under a second condition so as to fill the space between the mixed-phase grains. In the first condition, a deposition gas including silicon or germanium is diluted with the flow rate of hydrogen set to 50 times or more and 1000 times or less relative to the flow rate of the deposition gas, and the pressure in a process chamber is set to 67 Pa or more and 1333 Pa or less. In the second condition, the deposition gas including silicon or germanium and hydrogen are supplied to the process chamber while periodically increasing or decreasing the flow rate ratio therebetween, and the pressure in the process chamber is set to 1333 Pa or more and 13332 Pa or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
