| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with excellent electric characteristics by solving the problem in which: hydrogen existing in an oxide semiconductor of a transistor leads to a defect in electric characteristic of the transistor. <P>SOLUTION: An insulation layer in contact with an oxide semiconductor layer to be provided with a channel region is formed by a plasma chemical vapor deposition (CVD) method in which silicon halide is used. The insulation layer thus formed has a hydrogen concentration of less than 6×10<SP POS="POST">20</SP>atoms/cm<SP POS="POST">3</SP>and a halogen concentration of 1×10<SP POS="POST">20</SP>atoms/cm<SP POS="POST">3</SP>or more; therefore, hydrogen diffusion to the oxide semiconductor layer can be prevented, hydrogen in the oxide semiconductor layer can be deactivated or detached by halogen. Accordingly, a semiconductor device with excellent electric characteristics can be provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |
