发明名称 |
SUBMODULE AND POWER SEMICONDUCTOR MODULE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an improved submodule and power semiconductor module. <P>SOLUTION: The submodule 22b for the power semiconductor module includes: at least a part of a carrier 6; a conductor track 24 placed on the part of the carrier 6; and a semiconductor structure 26 provided on the conductor track 24 and integrated monolithically. The semiconductor structure includes: a connection achieving area which connects the semiconductor structure 26 to the conductor track 24; a first connection 28a; a second connection 28b; an integral non-reactive resistor connected between these connections 28a and 28b; a third connection 28c; and an integral double diode structure connected between the third connection 28c and second connection 28b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012033933(A) |
申请公布日期 |
2012.02.16 |
申请号 |
JP20110165244 |
申请日期 |
2011.07.28 |
申请人 |
SEMIKRON ELEKTRONIK GMBH & CO KG |
发明人 |
BERBERICH SVEN;ARENDT WINTRICH |
分类号 |
H01L25/07;H01L25/18 |
主分类号 |
H01L25/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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