发明名称 SUBMODULE AND POWER SEMICONDUCTOR MODULE
摘要 <P>PROBLEM TO BE SOLVED: To provide an improved submodule and power semiconductor module. <P>SOLUTION: The submodule 22b for the power semiconductor module includes: at least a part of a carrier 6; a conductor track 24 placed on the part of the carrier 6; and a semiconductor structure 26 provided on the conductor track 24 and integrated monolithically. The semiconductor structure includes: a connection achieving area which connects the semiconductor structure 26 to the conductor track 24; a first connection 28a; a second connection 28b; an integral non-reactive resistor connected between these connections 28a and 28b; a third connection 28c; and an integral double diode structure connected between the third connection 28c and second connection 28b. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012033933(A) 申请公布日期 2012.02.16
申请号 JP20110165244 申请日期 2011.07.28
申请人 SEMIKRON ELEKTRONIK GMBH & CO KG 发明人 BERBERICH SVEN;ARENDT WINTRICH
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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