| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain the resolution power twice as a mask pattern by dividing one line into two lines by performing development twice with an organic solvent and alkaline water. <P>SOLUTION: A pattern is formed by applying a resist composition comprising a polymer compound having both repeating units having a hydroxy group substituted with an acid labile group and repeating units having a carboxyl group substituted with an acid labile group, an acid generator and an organic solvent or a resist composition comprising a polymer compound having repeating units having a carboxyl group substituted with an acid labile group, an acid generator and an organic solvent onto a substrate; exposing a resist film with high-energy radiation after heating treatment; and performing development twice with an organic solvent and an alkali aqueous solution after heating treatment. <P>COPYRIGHT: (C)2012,JPO&INPIT |
