发明名称 COMPOUND SEMICONDUCTOR MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a compound semiconductor manufacturing method which enables bonding of a support substrate without heating an entire compound semiconductor element and shortens an entire manufacturing time of the compound semiconductor element by shortening time for bonding. <P>SOLUTION: The compound semiconductor manufacturing method comprises the steps of forming a support substrate 106 by a light permeable component, and emitting pulse light (flash light) of a wavelength penetrating the support substrate 106 but absorbed by solder layers 111, 105 from a flash lamp 2, for example, through the support substrate 106. As a result, only the bonding material layers 111, 105 disposed between compound semiconductor layers 102, 103, 104 and the support substrate 106 are momentarily heated and melted thereby bonding the support substrate 106. Note that, the solder layers may be melted by providing a metal layer on the support substrate 106 and heating the metal layer. Alternatively, infrared laser beams may be emitted by using a silicon substrate as the support substrate and using a YAG laser or a CO<SB POS="POST">2</SB>laser instead of the flash lamp. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012033589(A) 申请公布日期 2012.02.16
申请号 JP20100170149 申请日期 2010.07.29
申请人 USHIO INC 发明人 TANAKA YONETA
分类号 H01L33/32;H01L21/20;H01L31/10;H01S5/323 主分类号 H01L33/32
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