| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which ensures an operation margin. <P>SOLUTION: The semiconductor storage device comprises a cell array block in which a plurality of cell arrays each having a plurality of memory cells and a plurality of select lines for selecting the plurality of memory cells are laminated, a columnar first veer to which side face a predetermined first line among the select lines of the cell array block is connected and extending from a first height to a second height in the lamination direction, and a columnar second veer to which side face a predetermined second line upper than the first line among the select lines of the cell array block is connected and extending from a first height to a second height in the lamination direction. Each of the second lines is thicker than each of the first lines in the lamination direction and has higher resistance than that of each of the first lines. <P>COPYRIGHT: (C)2012,JPO&INPIT |
