| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory transistor using an island-shaped semiconductor which can increase capacitance between a floating gate and a control gate. <P>SOLUTION: The nonvolatile semiconductor memory transistor comprises an island-shaped semiconductor 301 in which a source region 303, a channel region 304 and a drain region 302 are laminated from an Si substrate side in this order, a floating gate 306 disposed intervening a tunnel insulation film 305 so as to surround an outer periphery of the channel region 304, a control gate 308a disposed intervening an interpoly insulating film 307 so as to surround an outer periphery of the floating gate 306, and a control gate line 308 connected to the control gate 308a and extending in a predetermined direction. The floating gate 306 extends to a lower region and an upper region of the control gate 308a and to a lower region of the control gate line 308. The interpoly insulating films 307 are sandwiched between the floating gate 306 and the upper face, the lower face and an inner face of the control gate 308a, and between a portion of the floating gate 306 extending to the lower region of the control gate line 308 and the control gate line 308, respectively. <P>COPYRIGHT: (C)2012,JPO&INPIT |
