| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etchant by which etching of silicon nitride is highly selectively performed without generating deposits after etching, in a step of removing silicon nitride from an electronic substrate having both a silicon dioxide layer and a silicon nitride layer. <P>SOLUTION: The etchant for silicon nitride is used which contains, as essential components, a quaternary alkyl ammonium salt having a specific chemical structural formula, a basic compound, and an inorganic acid and/or an organic acid. <P>COPYRIGHT: (C)2012,JPO&INPIT |
